標題: The effect of heat treatment on Ni/Au ohmic contacts to p-type GaN
作者: Chen, LC
Ho, JK
Chen, FR
Kai, JJ
Chang, L
Jong, CS
Chiu, CC
Huang, CN
Shih, KK
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 16-十一月-1999
摘要: The effect of heat treatment temperature on the microstructure and specific contact resistance of oxidized Ni(5 nm)/Au(5 nm) contacts to p-type GaN was investigated.,The: minimum specific contact resistance (Q(c)) obtained was 4 x 10(-6) Omega cm(2) after heat treating at 500 degrees C in air for 10 min. The cross-sectional microstructure of heat treated Ni/Au films on p-type GaN was examined with transmission electron microscope (TEM) in conjunction with compositional analyses. The high value of Q(c) for samples heat treated at lower temperatures (< 400 degrees C) was attributed to the fact that Au islands and crystalline NiO detached from the p-type GaN. When the temperature increased to 500 degrees C, NiO films and Au islands epitaxially constructed on p-type GaN matrix. The crystalline NiO may play a crucial role in the formation of low-resistance ohmic contact to p-GaN. Increasing the temperature further to 600 degrees C, large voids adjacent to p-GaN were observed which resulted in the reduction of contacting area deteriorating the contact resistance.
URI: http://hdl.handle.net/11536/30963
http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<773
ISSN: 0031-8965
DOI: 10.1002/(SICI)1521-396X(199911)176:1<773
期刊: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Volume: 176
Issue: 1
起始頁: 773
結束頁: 777
顯示於類別:會議論文


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