標題: Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures
作者: Chen, JF
Chen, NC
Wang, PY
Wang, JS
Weng, CM
電子物理學系
Department of Electrophysics
關鍵字: low-temperature GaAs;deep levels;capacitance-frequency spectra
公開日期: 1-Dec-1999
摘要: The electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 610 degrees C, the samples grown at 200, 300 and 400 degrees C show significant capacitance dispersions over frequency which is explained by the emission of carriers from traps. Based on a proposed band diagram where a dominating trap at 0.66-0.74 eV exists in the LT layers, the high-frequency dispersion is shown to be affected by resistance-capacitance (RC) time constant effects. From the mid-frequency capacitance versus voltage characteristics, the concentrations of the occupied traps are estimated to be approximate to 10(17) cm(-3) for samples grown at 200, 300 and 400 degrees C, which are found to be consistent with those obtained from analyzing the current-voltage characteristics of n(+)-LT-n(+) structures.
URI: http://dx.doi.org/10.1143/JJAP.38.L1425
http://hdl.handle.net/11536/30941
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.L1425
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 38
Issue: 12A
起始頁: L1425
結束頁: L1427
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