標題: The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
作者: Chao, TS
Chang, SJ
Chien, CH
Lin, HC
Huang, TY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nitrogen;N2O;MOSFETs;S/D extension
公開日期: 1-Dec-1999
摘要: The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.
URI: http://dx.doi.org/10.1143/JJAP.38.L1366
http://hdl.handle.net/11536/30940
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.L1366
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 38
Issue: 12A
起始頁: L1366
結束頁: L1368
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