標題: Optical and electrical investigations of isoelectronic In-doped GaN films
作者: Shu, CK
Lee, WH
Pan, YC
Chen, CC
Lin, HC
Ou, J
Chen, WH
Chen, WK
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: impurities in semiconductors;optical properties;phonons;luminescence
公開日期: 2000
摘要: The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/30860
http://dx.doi.org/10.1016/S0038-1098(00)00037-5
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(00)00037-5
期刊: SOLID STATE COMMUNICATIONS
Volume: 114
Issue: 5
起始頁: 291
結束頁: 293
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