標題: Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization
作者: Liu, PT
Chang, TC
Hu, JC
Yang, YL
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2000
摘要: The reliability of multistacked titanium/titanium nitride (Ti/TiN) films as a diffusion barrier has been investigated by electrical characteristic measurements and material analyses. Both thr chlorine content and the resistivity of the multistacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited-TiN film with the same thickness. The endurance of the diffusion barrier to thermal stress is enhanced by increasing the number of stacked layers of Ti/TiN films. Secondary, ion mass spectroscopy depth profiles of the multistacked Ti/TiN samples showed that Ti atom distribution is Fairly uniform in Filling the grain boundary of the TiN film. The result is consistent with the observation of X-ray transmission microscopy. Therefore, the leakage current resulting from junction spiking is Further reduced by the grain boundary effects when employing multistacked Ti/TiN as the diffusion barrier layer instead of a single layer of TiN film. (C) 2000 The Electrochemical Society. S0013-4651(99)10-006-5. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1393202
http://hdl.handle.net/11536/30853
ISSN: 0013-4651
DOI: 10.1149/1.1393202
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 1
起始頁: 368
結束頁: 372
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