標題: Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
作者: Luo, JS
Lin, WT
Chang, CY
Shih, PS
Pan, FM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2000
摘要: Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing were studied. Upon annealing at a temperature of 200-600 degrees C Ge segregation occurred with the extent becoming more severe at higher temperatures. The temperatures at which phase transformation and the agglomeration structure occurred were higher for Ni/Si1-x-yGexCy than for Ni/Si0.76Ge0.24. Upon pulsed KrF laser annealing the agglomeration structure was considerably improved, however, the retardation of phase transformation in the Ni/Si1-x-yGexCy system still occurred. C accumulation around the original amorphous/crystal interface formed by Cf implantation played a significant effect on delaying the phase transformation. For the Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy samples annealed at 0.2 J/cm(2) for 20 and 30 pulses, respectively, smooth Ni(Si0.76Ge0.24)(2) and Ni(Si1-x-yGexCy)(2) films could be grown, meanwhile Ge segregation and strain relaxation of the unreacted Si0.76Ge0.23 films were effectively suppressed. (C) 2000 American Vacuum Society. [S0734-2101(00)04301-3].
URI: http://dx.doi.org/10.1116/1.582131
http://hdl.handle.net/11536/30847
ISSN: 0734-2101
DOI: 10.1116/1.582131
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Volume: 18
Issue: 1
起始頁: 143
結束頁: 148
顯示於類別:期刊論文


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