標題: Nonuniform quantum well infrared photodetectors
作者: Wang, SY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2000
摘要: A nonuniform quantum well infrared photodetector (QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0x10(10) cm Hz(1/2)/W and a responsivity of 0.25 A/W at 8.2 mu m have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results. (C) 2000 American Institute of Physics. [S0021-8979(00)07701-X].
URI: http://hdl.handle.net/11536/30811
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 87
Issue: 1
起始頁: 522
結束頁: 525
顯示於類別:期刊論文


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  1. 000084244300082.pdf