標題: Passivation of copper films with magnesium doping using recoil ion implantation
作者: Wu, ZC
Liu, YL
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: copper;ion implantation;magnesium;oxidation
公開日期: 10-一月-2000
摘要: This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(99)00660-4
http://hdl.handle.net/11536/30807
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(99)00660-4
期刊: THIN SOLID FILMS
Volume: 358
Issue: 1-2
起始頁: 180
結束頁: 186
顯示於類別:期刊論文


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  1. 000084649700027.pdf