標題: Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning tunneling microscopy
作者: Lin, DS
Ku, TS
Chen, RP
物理研究所
Institute of Physics
公開日期: 15-一月-2000
摘要: In this paper, we investigate the interaction of phosphine (PH3) on the Si(100)-2 x 1 surface at temperatures between 635 and 900 K. The hydrogen desorption, growth mode, surface morphology, and chemical composition and ordering of the surface layer are examined by synchrotron radiation core-level photoemission and real-time high-temperature scanning tunneling microscopy. The P 2p core-level spectra indicate that decomposition of PHn is complete above similar to 550 K and the maximum P coverage is strongly influenced by the growth temperature, which governs the coverage of H-terminated sites. The scanning tunneling microscopy (STM) images taken at real time during PH3 exposure indicate that a surface phosphorus atom readily and randomly displaces one Si atom from the substrate. The ejected Si diffuses, nucleates, and incorporates itself into islands or step edges, leading to similar growth behavior as that found in Si chemical vapor deposition. Line defects both perpendicular and parallel to the dimer rows are observed on the nearly P-saturated surface. Perpendicular line defects act as a strain relief mechanism. Parallel line defects result from growth kinetics. STM images also indicate that incorporating a small amount of phosphorus eliminates the line defects in the Si(100)-2 x n surface.
URI: http://hdl.handle.net/11536/30802
ISSN: 1098-0121
期刊: PHYSICAL REVIEW B
Volume: 61
Issue: 4
起始頁: 2799
結束頁: 2805
顯示於類別:期刊論文