標題: A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICES
作者: YANG, JJ
CHUNG, SSS
CHANG, CH
LEE, GH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOBILITY MODEL;DEVICE SIMULATION;SUBMICRON LDD MOS DEVICES
公開日期: 1-四月-1993
摘要: A calibrated and physically based mobility model is developed for three-dimensional simulation of submicron metal-oxide-semiconductor (MOS) devices, in which the inversion layer mobility is emphasized. This inversion layer mobility can be generalized into a local form, i.e., expressed as functions of the local electric field at each grid point, so that it is well suited for device simulation. The resulting 3-D mobility model accurately characterizes the significant physical scattering effects including the Coulomb screening effect, quantum channel broadening effect, surface roughness scattering, structure-induced lateral surface scattering and velocity saturation limited effects. Results show that this new model can be incorporated into device simulators for accurately predicting drain currents of submicron LDD MOS devices. Moreover, the results compare more favorably with the experimental data than do those for other reported models.
URI: http://hdl.handle.net/11536/3080
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 32
Issue: 4
起始頁: 1583
結束頁: 1589
顯示於類別:期刊論文


文件中的檔案:

  1. A1993KZ50400012.pdf