標題: The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
作者: Chang, CY
Lee, YS
Huang, TY
Shih, PS
Lin, CW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: thin-film transistor (TFT);microcrystalline;amorphous;crystalline factor
公開日期: 29-一月-2000
摘要: The effects of hydrogenated microcrystalline silicon (mu c-Si:H) film with various crystalline factors on thin-film transistors (TFTs) with low-high-low band gap structure are studied. Compared to hydrogenated amorphous silicon (a-Si:H) TFT with conventional inverted-stagger structure, the device with mu c-Si:H film of high crystalline factor in the active channel depicts improved interfacial active layer near the gate insulator interface as well as the later-grown bulk active layer, resulting in improved device parameters including field effect mobility, threshold voltage, subthreshold swing and ON-current. While a-Si:H film of low crystalline factor and high-band-gap is proposed for the source and drain offset regions in the new device to prevent the band-to-band tunneling, thus alleviates the high OFF-current inherent in conventional mu c-Si:H thin-film transistors, resulting in an improved ON/OFF current ratio. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(99)00174-1
http://hdl.handle.net/11536/30797
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(99)00174-1
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 62
Issue: 2
起始頁: 153
結束頁: 157
顯示於類別:期刊論文


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