標題: Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide
作者: Wang, HW
Chiou, BS
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2000
摘要: Titanium-tungsten is employed as the diffusion barrier in a Cu/barrier/polyimide/Si system. The electromigration damage (EMD) of Cu with a TiW barrier is investigated utilizing an empirical formula. Two activation energies are obtained suggesting a surface electromigration mechanism at low temperature (140-190 degrees C) and a combined migration mechanism at high temperature (190-230 degrees C). The presence of the TiW barrier layer improves the high temperature electromigration resistance. The effects of the TiW barrier on the microstructure and electrical properties of Cu metallization are discussed.
URI: http://dx.doi.org/10.1023/A:1008995902371
http://hdl.handle.net/11536/30795
ISSN: 0957-4522
DOI: 10.1023/A:1008995902371
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 11
Issue: 1
起始頁: 17
結束頁: 24
顯示於類別:期刊論文


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