標題: Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii
作者: Tarntair, FG
Hong, WK
Ku, TK
She, NJ
Chen, CF
Cheng, HC
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: field emission;bias assisted carburization;Si multitips;microwave CVD;emitter array;diamond clad Si tips
公開日期: 1-Feb-2000
摘要: Various types of ultra sharp Si microtips and multitips with carbon-clading films were fabricated by microwave plasma chemical vapor deposition (MPCVD). The radii of these Si tips prepared by bias assisted carburization (BAC) can he reduced below 300 Angstrom under a low deposition temperature (<550 degrees C). Field emission characterization was performed in a high vacuum environment. With an applied anode voltage of 1100 V, emission currents of 169 mu A, 198 mu A, and 385 mu A can be achieved from an array of 50 x 50 BAG-clad Si monotips, Si multitips via high bias, and Si multitips via the Ar presputtering technique, respectively. Both the auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) studies of the C l s peak suggest that the BAC-cladding is more likely to be a carbon-rich SiC layer or a SiC layer mixed with a small amount of diamond nuclei. This BAC-carbon can be used as an effective nucleation layer for further diamond nuclei. Due to the low field emission, low temperature, and large area growth capability, the sharp BAC-clad Si multitip field emitter arrays are attractive Tor flat panel display applications.
URI: http://dx.doi.org/10.1143/JJAP.39.432
http://hdl.handle.net/11536/30783
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.432
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 2A
起始頁: 432
結束頁: 437
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