標題: Relaxation of pinned domains in patterned magnetic thin films
作者: Wu, TH
Wu, JC
Huang, YW
Ye, LX
Chen, BM
Shieh, HPD
光電工程學系
Department of Photonics
關鍵字: magnetic pinning;E-beam lithography;domain expansion;domain wall motion
公開日期: 1-Feb-2000
摘要: We have shown in previous papers that the magnetic domains could be pinned inside the artificially patterned hole arrays under suitable geometry aspect ratio. Nevertheless, we have found that if we reverse the magnetization directions through domain wall motion, the confined domains expand from smaller territory into larger territory for some samples. In addition, the pinned domains maintained the same moment's orientation after the domain expansion. The possible reason for the pinned domains to retain the same moment's orientation maybe those pinning holes that act as high anisotropy defects. Thus, domain wall motion was around the high anisotropy sites and only peeled away the domain in the land area while the enclosed domain of the hole area maintained the same orientation. Moreover, the feasible reason for the expansion domains is the coercive force, which is perpendicular to the side-walls and pinning the domains inside the holes, are relaxed and thus causing the domains growth. This phenomenon is called the relaxation of pinning domains. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0304-8853(99)00694-0
http://hdl.handle.net/11536/30762
ISSN: 0304-8853
DOI: 10.1016/S0304-8853(99)00694-0
期刊: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume: 209
Issue: 1-3
起始頁: 224
結束頁: 227
Appears in Collections:Conferences Paper


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