標題: Electrical properties of Ta2O5 thin films deposited on Cu
作者: Ezhilvalavan, S
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: electrical properties;copper;tantalum;oxides
公開日期: 1-Feb-2000
摘要: The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800 degrees C for 30 s in N-2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (<100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (>100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(99)00873-1
http://hdl.handle.net/11536/30757
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(99)00873-1
期刊: THIN SOLID FILMS
Volume: 360
Issue: 1-2
起始頁: 268
結束頁: 273
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