標題: Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure
作者: Chang, TC
Liu, PT
Yang, YL
Hu, JC
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: barrier;multi-stacked Ti/TiN;chlorine content;resistivity;boundary effects
公開日期: 1-Feb-2000
摘要: A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.
URI: http://dx.doi.org/10.1143/JJAP.39.L82
http://hdl.handle.net/11536/30756
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L82
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 2A
起始頁: L82
結束頁: L85
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