標題: A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's
作者: Chu, YL
Lin, DW
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge-pumping method;interface-states;MOSFET;oxide-trapped charges
公開日期: 1-二月-2000
摘要: A new charge-pumping method has been developed to characterize the hot-carrier induced local damages. By holding the rising and falling slopes of the gate pulse constant and then varying the high-level (V-GH) and base-level (V-GL) voltages, the lateral distribution of interface-states ( N-it (x)) and oxide-trapped charges (Q(ox) (x)) can be profiled. The experimental results show that during extracting Q(ox) (x) after hot-carrier stress, a contradictory result occurs between the extraction methods by varing the high-level (VGH) and base-level (V-GL) voltages. As a result, some modifications are made to eliminate the perturbation induced by the generated interface-states after hot-carrier stress for extracting Q(ox) (x).
URI: http://dx.doi.org/10.1109/16.822279
http://hdl.handle.net/11536/30750
ISSN: 0018-9383
DOI: 10.1109/16.822279
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 47
Issue: 2
起始頁: 348
結束頁: 353
顯示於類別:期刊論文


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  1. 000085344800015.pdf