標題: High-pressure phase transitions in Zn0.83Mn0.17Se thin film
作者: Lin, CM
Chuu, DS
電子物理學系
Department of Electrophysics
公開日期: 28-二月-2000
摘要: The energy-dispersive X-ray-diffraction (EDXD) and Raman spectroscopy are used to study phase transitions of Zn0.83Mn0.17Se thin film up to 17.5 and 16.1 GPa, respectively. The EDXD results show that possible zinc blende(B3) to sodium chloride phase(B1) structure transition for Zn0.83Mn0.17Se thin film occurs at 10.0 GPa. The unloading run reveals a reversible phase transition existed in the Zn0.83Mn0.17Se thin film. For micro-Raman spectra at ambient pressure, three Raman peaks are distinct as LO, TO, and Mn local modes in Zn1-xMnxSe bulk. As the pressure is increased to 10.9 GPa, metallization occurs, the LO and Mn local phonon peaks disappear while the two unidentified Raman peaks of TO mode are still observable above the metallization pressure till 17.5 GPa. The phase transition pressure P-t obtained from the results of micro-Raman spectra seems to be in good agreement with that obtained by EDXD measurements. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0375-9601(00)00050-5
http://hdl.handle.net/11536/30721
ISSN: 0375-9601
DOI: 10.1016/S0375-9601(00)00050-5
期刊: PHYSICS LETTERS A
Volume: 266
Issue: 4-6
起始頁: 435
結束頁: 440
顯示於類別:期刊論文


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