標題: Search of optimum bias voltage for oxide patterning on Si using scanning tunneling microscopy in air
作者: Tseng, KS
Hsieh, TE
Lo, SC
Lin, HF
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-三月-2000
摘要: Nanometer-scale oxide patterns were fabricated on H-passivated Si using a scanning tunneling microscopy (STM) in air. We found that the optimum bias voltage to generate clean and uniform oxide patterns depends on the composition of the tip material rather than on the tip head sharpness. For tungsten tips, oxide patterns with the desired geometrical features can be obtained at bias voltages ranging from -0.8 to -1.2 V, while for platinum-iridium tips, the bias voltages lie between -1.5 and -2.5 V at a fixed tunneling current of 2.0 nA. These biases correspond to the working voltage generating the oxide pattern with the lowest apparent depth. Beyond these voltage ranges, tip scratching on the sample surface or field-induced mass transfer from the tip might occur, as evidenced by tip wearing and the contamination of debris of tip material in the vicinity of the patterns. On the other hand, the tip head sharpness affects the width and the height of line patterns. When extremely fine oxide lines were desired, a sharp tip has to be used for STM patterning. (C) 2000 American Vacuum Society. [S0734-211X(00)08202-0].
URI: http://dx.doi.org/10.1116/1.591253
http://hdl.handle.net/11536/30714
ISSN: 1071-1023
DOI: 10.1116/1.591253
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 18
Issue: 2
起始頁: 639
結束頁: 643
顯示於類別:期刊論文


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