標題: Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
作者: Chen, JF
Chen, NC
Wang, JS
Wang, PY
電子物理學系
Department of Electrophysics
關鍵字: In0.2Ga0.8As/GaAs Schottky diodes;capacitance dispersion;deep traps
公開日期: 1-三月-2000
摘要: Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.
URI: http://dx.doi.org/10.1143/JJAP.39.1102
http://hdl.handle.net/11536/30708
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.1102
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 3A
起始頁: 1102
結束頁: 1103
顯示於類別:期刊論文