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dc.contributor.authorTsai, MSen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:45:36Z-
dc.date.available2014-12-08T15:45:36Z-
dc.date.issued2000-03-01en_US
dc.identifier.issn1521-3331en_US
dc.identifier.urihttp://dx.doi.org/10.1109/6144.833051en_US
dc.identifier.urihttp://hdl.handle.net/11536/30682-
dc.description.abstractThe influence of bottom electrodes (Pt, Ir, Ru) on the degradation of (Ba,Sr)TiO3 (BST) thin films under dc stress conditions was investigated. The current-time (I-t) end current-voltage (I-V) measurement results indicated that the BST thin films deposited on Ru have faster degradation than those deposited on Pt and Ir. The degradation was considered to be caused by the deterioration of Schottky-barrier. Under de stress conditions, the dielectric relaxation current in the BST dielectric films probably enhances the deterioration. The breakdown time was found to be approximated by an exponential function of an electric field [t(B) = alpha exp(-beta E)] for dc stress. The value of the exponential factor beta for BST deposited on Pt and Ir was about a quarter of that for BST deposited on Ru. The different value of beta observed under de stress indicates that the degradation of BST on Ru would be more serious than on Pt and Ir. The ten Sears lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir and Ru have longer lifetime over ten years on operation at the voltage bias of 1 V.en_US
dc.language.isoen_USen_US
dc.subjectbottom electrodesen_US
dc.subjectBST thin filmsen_US
dc.subjectdegradationen_US
dc.subjectdielectric filmen_US
dc.subjectdynamic random-access memoriesen_US
dc.subjectsputteringen_US
dc.titleEffect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/6144.833051en_US
dc.identifier.journalIEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIESen_US
dc.citation.volume23en_US
dc.citation.issue1en_US
dc.citation.spage128en_US
dc.citation.epage135en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000086499000017-
dc.citation.woscount11-
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