標題: Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
作者: Tsai, MS
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bottom electrodes;BST thin films;degradation;dielectric film;dynamic random-access memories;sputtering
公開日期: 1-三月-2000
摘要: The influence of bottom electrodes (Pt, Ir, Ru) on the degradation of (Ba,Sr)TiO3 (BST) thin films under dc stress conditions was investigated. The current-time (I-t) end current-voltage (I-V) measurement results indicated that the BST thin films deposited on Ru have faster degradation than those deposited on Pt and Ir. The degradation was considered to be caused by the deterioration of Schottky-barrier. Under de stress conditions, the dielectric relaxation current in the BST dielectric films probably enhances the deterioration. The breakdown time was found to be approximated by an exponential function of an electric field [t(B) = alpha exp(-beta E)] for dc stress. The value of the exponential factor beta for BST deposited on Pt and Ir was about a quarter of that for BST deposited on Ru. The different value of beta observed under de stress indicates that the degradation of BST on Ru would be more serious than on Pt and Ir. The ten Sears lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir and Ru have longer lifetime over ten years on operation at the voltage bias of 1 V.
URI: http://dx.doi.org/10.1109/6144.833051
http://hdl.handle.net/11536/30682
ISSN: 1521-3331
DOI: 10.1109/6144.833051
期刊: IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
Volume: 23
Issue: 1
起始頁: 128
結束頁: 135
顯示於類別:期刊論文


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