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dc.contributor.authorCheng, Chao-Chingen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.contributor.authorChang, Ching-Chihen_US
dc.contributor.authorKei, Chi-Chungen_US
dc.contributor.authorYang, Chun-Huien_US
dc.contributor.authorHsiao, Chien-Nanen_US
dc.contributor.authorPerng, Tsong-Pyngen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:45:36Z-
dc.date.available2014-12-08T15:45:36Z-
dc.date.issued2008en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://hdl.handle.net/11536/30676-
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/100/4/042002en_US
dc.description.abstractThis paper has studied the electrical and interfacial properties of atomic-layerdeposited Al(2)O(3) thin film on ammonium-sulfide passivated GaAs. It was found that the Al(2)O(3) deposited at 300 degrees C relative to that at 100 degrees C showed the nearly four orders of magnitude reduction in gate leakage current at the capacitance-equivalent-thickness of 40 angstrom. The capacitance-voltage (C-V) characteristics displayed the higher oxide capacitance, reduced frequency dispersion and less charge trapping when GaAs receiving (NH(4))(2)S sulfide immersion; these improvements can be reasonably explained by the suppression of both native oxides and the resultant improved interface quality. Annealing as-deposited Al(2)O(3)/GaAs structures at high temperatures further reduces the Fermi level pinning effect on accumulation capacitance, however, causes an increase in C-V frequency dispersion and gate leakage current. We suggested that these phenomena are strongly associated to the amount of As-related defects resided at the dielectric/ substrate interface during thermal desorption.en_US
dc.language.isoen_USen_US
dc.titleElectrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1742-6596/100/4/042002en_US
dc.identifier.journalPROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGYen_US
dc.citation.volume100en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000275655200050-
Appears in Collections:Conferences Paper


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