標題: Electrical and material characterization of atomic-layer-deposited Al(2)O(3) gate dielectric on ammonium sulfide treated GaAs substrates
作者: Cheng, Chao-Ching
Chien, Chao-Hsin
Luo, Guang-Li
Chang, Ching-Chih
Kei, Chi-Chung
Yang, Chun-Hui
Hsiao, Chien-Nan
Perng, Tsong-Pyng
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: This paper has studied the electrical and interfacial properties of atomic-layerdeposited Al(2)O(3) thin film on ammonium-sulfide passivated GaAs. It was found that the Al(2)O(3) deposited at 300 degrees C relative to that at 100 degrees C showed the nearly four orders of magnitude reduction in gate leakage current at the capacitance-equivalent-thickness of 40 angstrom. The capacitance-voltage (C-V) characteristics displayed the higher oxide capacitance, reduced frequency dispersion and less charge trapping when GaAs receiving (NH(4))(2)S sulfide immersion; these improvements can be reasonably explained by the suppression of both native oxides and the resultant improved interface quality. Annealing as-deposited Al(2)O(3)/GaAs structures at high temperatures further reduces the Fermi level pinning effect on accumulation capacitance, however, causes an increase in C-V frequency dispersion and gate leakage current. We suggested that these phenomena are strongly associated to the amount of As-related defects resided at the dielectric/ substrate interface during thermal desorption.
URI: http://hdl.handle.net/11536/30676
http://dx.doi.org/10.1088/1742-6596/100/4/042002
ISSN: 1742-6588
DOI: 10.1088/1742-6596/100/4/042002
期刊: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY
Volume: 100
Appears in Collections:Conferences Paper


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