標題: Reduction of epitaxial alignment in n(+)-p poly-Si emitter diode due to gettering of P and As by Ar implantation
作者: Lee, LS
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 16-三月-2000
摘要: It is demonstrated that Ar implantation can retard the epitaxial realignment of poly-Si/Si in an As- or P-doped n(+)-p poly-emitter diode during BF2 implantation. This is believed to be due to the gettering of As, P, and F by bubble-like defects created by the Ar implantation used to reduce the pile-up of these dopants at the poly-Si/Si interface. Consequently, there is less break-up of the interface oxide, resulting in a reduction in epitaxial realignment.
URI: http://dx.doi.org/10.1049/el:20000379
http://hdl.handle.net/11536/30650
ISSN: 0013-5194
DOI: 10.1049/el:20000379
期刊: ELECTRONICS LETTERS
Volume: 36
Issue: 6
起始頁: 579
結束頁: 581
顯示於類別:期刊論文


文件中的檔案:

  1. 000086381000066.pdf