標題: Fabrication and characterization of the conic diamond field emission arrays with gated structure
作者: Chen, CF
Wang, HC
Hsieh, HC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diamond;field emitter array;MPCVD;emission current
公開日期: 1-四月-2000
摘要: In this study, we successfully fabricate conic diamond field emitter array devices by applying an IC process capable of forming a metal-insulator-semiconductor (MIS) diode structure. The conic diamonds are selectively deposited and, ultimately, grow inside of the electric gates. In addition, the field emission current is measured when applying +1000V voltage on the anode in which the applied gate voltage is varied from 0 to 50 volts. Experimental results indicate that the threshold voltage of this device is about 12 V, and the field emission current is about 40 mu A when the gate voltage is 30 V. Furthermore, current-voltage (I-V) characterization of the electrical properties demonstrates that the reason fur the change of the threshold voltage of conic diamond held emission arrays (FEAs) fabricated under different CH4 concentration may be attributed to the diamond tip radius.
URI: http://dx.doi.org/10.1143/JJAP.39.1880
http://hdl.handle.net/11536/30631
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.1880
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 4A
起始頁: 1880
結束頁: 1884
顯示於類別:期刊論文


文件中的檔案:

  1. 000088909200058.pdf