標題: Influence of sheet resistance on N2O-grown polyoxide
作者: Chang, KM
Lee, TC
Liu, SH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: sheet resistance;polyoxide;phosphorus;polysilicon;charge-to-breakdown
公開日期: 1-Apr-2000
摘要: The influence of sheet resistance on polyoxide was explored in this paper. Polyoxides were grown on polysilicon with different sheet resistances (30-150 Omega/cm(2)). It was found that as the sheet resistance increased from 30 Omega/cm(2) to 50 Omega/cm(2) the characteristics of polyoxide was improved with higher breakdown electric field and higher charge-to-breakdown. However, as the sheet resistance continued to increase (> 110 Omega/cm(2)), the characteristics of polyoxide became worse again. This phenomenon is explained by phosphorus concentration incorporated into polyoxide. Phosphorus concentration helps to form a smoother polyoxide/polysilicon interface. Thus, the characteristics of polyoxide with high sheet resistance (>110 Omega/cm(2)) was worse than that of polyoxide with low sheet resistance due to a rough polyoxide interface. However, too much. phosphorus incorporated into polyoxide degrades the quality of polyoxide. So the characteristics of polyoxide with low sheet resistance (<50 Omega/cm(2)) became worse again. Consequently, high quality of polyoxide should he grown on the polysilicon with middle sheet resistance (50-110 Omega/cm(2)).
URI: http://dx.doi.org/10.1143/JJAP.39.1604
http://hdl.handle.net/11536/30630
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.1604
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 4A
起始頁: 1604
結束頁: 1607
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