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dc.contributor.authorChen, CFen_US
dc.contributor.authorHsieh, HCen_US
dc.date.accessioned2014-12-08T15:45:30Z-
dc.date.available2014-12-08T15:45:30Z-
dc.date.issued2000-04-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(99)00349-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/30626-
dc.description.abstractField emission display is evolving as a promising technique for the future generation of flat panel displays. Characteristics affecting the power of field emitter arrays include the shape and work function of emission materials, distance between tip and gate, and the environmental vacuum condition. In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. Deposition of the diamond film in this MIS diode forms a column-like diamond with gated field emission arrays (FEAs). This process is completed using a bias-assisted microwave plasma chemical vapor deposition system. Our results indicate that the threshold voltage of column-like diamond FEAs is about 10 V, and the field emission current density is about 139 mA cm(-2) (at V-gc = 20 V). The diamond field emitter array devices with the new gate structure and tip morphology significantly influence the electron field emission characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectemission currenten_US
dc.subjectfield emission arraysen_US
dc.subjectflat panel displaysen_US
dc.titleEmission current influence of gated structure and diamond emitter morphologies in triode-type field emission arraysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0925-9635(99)00349-0en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume9en_US
dc.citation.issue3-6en_US
dc.citation.spage1257en_US
dc.citation.epage1262en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000087382400206-
Appears in Collections:Conferences Paper


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