標題: Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arrays
作者: Chen, CF
Hsieh, HC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: emission current;field emission arrays;flat panel displays
公開日期: 1-四月-2000
摘要: Field emission display is evolving as a promising technique for the future generation of flat panel displays. Characteristics affecting the power of field emitter arrays include the shape and work function of emission materials, distance between tip and gate, and the environmental vacuum condition. In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. Deposition of the diamond film in this MIS diode forms a column-like diamond with gated field emission arrays (FEAs). This process is completed using a bias-assisted microwave plasma chemical vapor deposition system. Our results indicate that the threshold voltage of column-like diamond FEAs is about 10 V, and the field emission current density is about 139 mA cm(-2) (at V-gc = 20 V). The diamond field emitter array devices with the new gate structure and tip morphology significantly influence the electron field emission characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0925-9635(99)00349-0
http://hdl.handle.net/11536/30626
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(99)00349-0
期刊: DIAMOND AND RELATED MATERIALS
Volume: 9
Issue: 3-6
起始頁: 1257
結束頁: 1262
顯示於類別:會議論文


文件中的檔案:

  1. 000087382400206.pdf