標題: A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS
作者: CHIN, SP
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-1993
摘要: A new I-V model for short gate-length MESFET's operated in the turn-on region is proposed, in which the two-dimensional potential distribution contributed by the depletion-layer charges under the gate and in the ungate region are separately obtained by conventional 1D approximation and Green's function solution technique. Moreover, the bias-dependent parasitic resistances due to the modulation of depletion layer in the ungate region for non-self-alignment MESFET's are also taken into account in the developed I-V model. It is shown that good agreements are obtained between the developed new I-V model and the results of 2D numerical analysis. Moreover, comparisons between the proposed analytical model and the experimental data are made and excellent agreements are obtained.
URI: http://dx.doi.org/10.1109/16.202782
http://hdl.handle.net/11536/3062
ISSN: 0018-9383
DOI: 10.1109/16.202782
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 40
Issue: 4
起始頁: 712
結束頁: 720
顯示於類別:期刊論文


文件中的檔案:

  1. A1993KR13800005.pdf