標題: Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown
作者: Huang, HT
Chen, MJ
Chen, JH
Su, CW
Hou, CS
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: silicon;CMOS;oxide breakdown;Monte Carte;percolation;extrinsic;effective oxide thinning
公開日期: 1-四月-2000
摘要: The Monte Carlo sphere model is extended to deal with the extrinsic time-dependent-dielectric-breakdown (TCDB) by incorporating the well-known "effective oxide thinning" concept. Percolation simulation, based on this model for the first time, evidences that the process defects induced extrinsic TDDB is also statistical in nature as is the intrinsic one, and is characterized by a probability function defining local oxide thinning. The experimental bimodal or even multimodal characteristics can be reproduced accordingly. Furthermore, the simulation results in the extrinsic regime are found to be sample-size (i.e., the total number of samples that span the breakdown statistics) dependent, suggesting that care should be taken when evaluating the extrinsic TDDB data in a real manufacturing process.
URI: http://dx.doi.org/10.1143/JJAP.39.2026
http://hdl.handle.net/11536/30602
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.2026
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 4B
起始頁: 2026
結束頁: 2029
顯示於類別:會議論文


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  1. 000088909300015.pdf