標題: Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
作者: Wuu, DS
Horng, RH
Liao, FC
Leu, CC
Huang, TY
Sze, SM
Chen, HY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-2000
摘要: The effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the nonplasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant. (C) 2000 Elsevier Science Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/30599
ISSN: 0026-2714
期刊: MICROELECTRONICS RELIABILITY
Volume: 40
Issue: 4-5
起始頁: 663
結束頁: 666
顯示於類別:會議論文


文件中的檔案:

  1. 000087433200026.pdf