標題: Characteristics of high breakdown voltage Schottky barrier diodes using p(+)-polycrystalline-silicon diffused-guard-ring
作者: Liou, BW
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-2000
摘要: A new structure of Schottky diode using the p(+)-polycrystalline silicon (polysilicon) diffused-guard-ring is proposed. For 950 degrees C with 30 min annealing condition, the diode gives a nearly ideal J-V characteristic with a high reverse breakdown voltage (148 V) and a low reverse leakage current density (8.4 mu A/cm(2)). The guard-ring structure prevents the premature breakdown; the polysilicon layer prevents the surface leakage. It was also found that the more the driving time of furnace, the higher the breakdown voltage of the Schottky diode. The breakdown characteristic of a Schottky diode was shown to be closely related with the diffusion length of the boron ions being inside the Si wafer. The electrical characteristics of the p(+)-polysilicon diffused-guard-ring Schottky device was compared with those of the conventional diffused-guard-ring sample. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(99)00258-0
http://hdl.handle.net/11536/30596
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(99)00258-0
期刊: SOLID-STATE ELECTRONICS
Volume: 44
Issue: 4
起始頁: 631
結束頁: 638
顯示於類別:期刊論文


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