標題: Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition
作者: Chang, L
Yan, JE
Chen, FR
Kai, JJ
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: bias;heteroepitaxy;silicon carbide;transmission electron microscopy
公開日期: 1-四月-2000
摘要: Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H-2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond [110]//6H-SiC [11 (2) over bar 0]. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0925-9635(99)00333-7
http://hdl.handle.net/11536/30589
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(99)00333-7
期刊: DIAMOND AND RELATED MATERIALS
Volume: 9
Issue: 3-6
起始頁: 283
結束頁: 289
顯示於類別:會議論文


文件中的檔案:

  1. 000087382400011.pdf