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dc.contributor.authorYeh, CFen_US
dc.contributor.authorLee, YCen_US
dc.contributor.authorSu, YCen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorLin, CHen_US
dc.date.accessioned2014-12-08T15:45:23Z-
dc.date.available2014-12-08T15:45:23Z-
dc.date.issued2000-04-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.L354en_US
dc.identifier.urihttp://hdl.handle.net/11536/30578-
dc.description.abstractA low-permittivity organic dielectric, methylsilsesquioxane (MSQ), used as an interlevel dielectric is expected to reduce the parasitic capacitance in integrated circuit. However, MSQ film can he easily degraded during resist ashing after the film is etched with the damascene trenches being created. In this work, a novel sidewall capping technology is developed to solve the degradation issue. Prior to resist ashing, a high-quality, low-permittivity oxide him is selectively deposited onto the sidewalls of MSQ trenches using selective liquid-phase deposition. Experimental results demonstrate that the capping oxide can effectively protect the sidewalls of MSQ trenches from ashing-induced degradation.en_US
dc.language.isoen_USen_US
dc.subjectorganic dielectricen_US
dc.subjectmethylsilsesquioxaneen_US
dc.subjectdamascene trenchesen_US
dc.subjectsidewall cappingen_US
dc.subjectselective liquid-phase depositionen_US
dc.subjectashing-induced degradationen_US
dc.titleNovel sidewall capping for degradation-free damascene trenches of low-permittivity methylsilsesquioxaneen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.L354en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue4Ben_US
dc.citation.spageL354en_US
dc.citation.epageL356en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088910900009-
dc.citation.woscount3-
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