標題: Novel sidewall capping for degradation-free damascene trenches of low-permittivity methylsilsesquioxane
作者: Yeh, CF
Lee, YC
Su, YC
Wu, KH
Lin, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: organic dielectric;methylsilsesquioxane;damascene trenches;sidewall capping;selective liquid-phase deposition;ashing-induced degradation
公開日期: 15-四月-2000
摘要: A low-permittivity organic dielectric, methylsilsesquioxane (MSQ), used as an interlevel dielectric is expected to reduce the parasitic capacitance in integrated circuit. However, MSQ film can he easily degraded during resist ashing after the film is etched with the damascene trenches being created. In this work, a novel sidewall capping technology is developed to solve the degradation issue. Prior to resist ashing, a high-quality, low-permittivity oxide him is selectively deposited onto the sidewalls of MSQ trenches using selective liquid-phase deposition. Experimental results demonstrate that the capping oxide can effectively protect the sidewalls of MSQ trenches from ashing-induced degradation.
URI: http://dx.doi.org/10.1143/JJAP.39.L354
http://hdl.handle.net/11536/30578
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L354
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 4B
起始頁: L354
結束頁: L356
顯示於類別:期刊論文


文件中的檔案:

  1. 000088910900009.pdf