標題: Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy
作者: Chen, JF
Wang, JS
Huang, MM
Chen, NC
電子物理學系
Department of Electrophysics
公開日期: 17-四月-2000
摘要: We present electrical data to show that, after nitrogen implantation, GaAs films become resistive after high-temperature annealing. The activation energies of the resistance are determined to be 0.34, 0.59, and 0.71 eV after annealing at 500, 700, and 950 degrees C, respectively. The increase in the activation energy with increasing annealing temperature can be explained by the results of traps detected in deep-level transient spectroscopy, where two traps at 0.32 and 0.70 eV are observed in the samples after annealing. The intensity of the trap at 0.32 eV is found to reduce by annealing. By comparing to the result of the x-ray diffraction, we suspect that this trap is related to the lattice-expansion defects. The trap at 0.70 eV is observed only in samples annealed at high temperatures. Since this trap contributes to the high-resistive effect, we believe that it is associated with the nitrogen ions. (C) 2000 American Institute of Physics. [S0003-6951(00)04716-1].
URI: http://hdl.handle.net/11536/30574
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 76
Issue: 16
起始頁: 2283
結束頁: 2285
顯示於類別:期刊論文


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