標題: Inelastic electron dephasing times in CuxGe100-x alloys
作者: Lin, JJ
Sheng, PJ
Hsu, SY
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: dephasing times;disordered metals;electron-electron relaxation;electron-phonon relaxation
公開日期: 1-五月-2000
摘要: We have studied the inelastic electron dephasing scattering times, tau(i). in disordered CuxGe100-x(35 less than or equal to x less than or equal to 60) alloys between I and 15 K. The values of tau(i)(-1) (similar to T-p), and especially the exponent of temperature p, are extracted from weak localization studies. We find that the value of p continuously decreases from similar to 3 to similar to 1 as x gradually decreases from 60 to 35. Our observation is understood in terms of a crossover of the inelastic electron dephasing in impure metals from e-Fh scattering to critical e-e scattering as the disorder greatly increases and the system moves significantly toward the mobility edge. (C) 2000 Elsevier Science B.V. All. rights reserved.
URI: http://dx.doi.org/10.1016/S0921-4526(99)01836-0
http://hdl.handle.net/11536/30545
ISSN: 0921-4526
DOI: 10.1016/S0921-4526(99)01836-0
期刊: PHYSICA B
Volume: 280
Issue: 1-4
起始頁: 460
結束頁: 461
顯示於類別:會議論文


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  1. 000086333700134.pdf