標題: Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells
作者: Sun, KW
Song, TS
Wang, SY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: carrier-carrier scattering;LO phonon emission;nonthermal carrier distributions
公開日期: 1-五月-2000
摘要: We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (greater than or equal to 10(10) cm(-2)) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (similar to 10(10) cm(-2)), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 X 10(10) cm(-2) in the 5 nm quantum wells. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0167-9317(99)00475-X
http://hdl.handle.net/11536/30529
ISSN: 0167-9317
DOI: 10.1016/S0167-9317(99)00475-X
期刊: MICROELECTRONIC ENGINEERING
Volume: 51-2
Issue: 
起始頁: 189
結束頁: 194
顯示於類別:會議論文


文件中的檔案:

  1. 000087431500025.pdf