Title: Yellow luminescence in n-type GaN epitaxial films
Authors: Chen, HM
Chen, YF
Lee, MC
Feng, MS
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
Issue Date: 15-Sep-1997
Abstract: Photoluminescence, resonant Raman scattering, and photoconductivity measurements have been employed to study the yellow; emission in undoped n-type and a set of Se-doped GaN epitaxial films. It is best described by a transition from the conduction-band edge to a deep acceptor. Unlike the donors and accepters used in most previous studies that substitute Ga sires, Se atoms can replace N sites. With this unique fact, we identify that the origin of the yellow emission involves the nitrogen antisite. In addition, it is found that persistent photoconductivity can be observed after the yellow; band excitation, We further suggest that the nitrogen antisite exhibits a metastable behavior similar to the arsenic antisite in GaAs.
URI: http://hdl.handle.net/11536/305
ISSN: 0163-1829
Journal: PHYSICAL REVIEW B
Volume: 56
Issue: 11
Begin Page: 6942
End Page: 6946
Appears in Collections:Articles