標題: Yellow luminescence in n-type GaN epitaxial films
作者: Chen, HM
Chen, YF
Lee, MC
Feng, MS
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 15-九月-1997
摘要: Photoluminescence, resonant Raman scattering, and photoconductivity measurements have been employed to study the yellow; emission in undoped n-type and a set of Se-doped GaN epitaxial films. It is best described by a transition from the conduction-band edge to a deep acceptor. Unlike the donors and accepters used in most previous studies that substitute Ga sires, Se atoms can replace N sites. With this unique fact, we identify that the origin of the yellow emission involves the nitrogen antisite. In addition, it is found that persistent photoconductivity can be observed after the yellow; band excitation, We further suggest that the nitrogen antisite exhibits a metastable behavior similar to the arsenic antisite in GaAs.
URI: http://hdl.handle.net/11536/305
ISSN: 0163-1829
期刊: PHYSICAL REVIEW B
Volume: 56
Issue: 11
起始頁: 6942
結束頁: 6946
顯示於類別:期刊論文