標題: Effect of lead additive on the ferroelectric properties and microstructure of SrxPbyBi2zTa2O9 thin films
作者: Chen, SY
Lee, VC
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-六月-2000
摘要: Ferroelectric thin films of bismuth-containing layered perovskite SrxPbyBi2zTa2O9 have been prepared using the metalorganic decomposition method. The effect of both Sr and Pb content on the crystal structure, microstructure, and ferroelectric properties of SrxPbyBi2.3Ta2O9 films was investigated. A maximum remanent polarization of 2P(r)=19.2 mu C/cm(2) was obtained for the SrxPb0.2Bi2.3Ta2O9 film with 20 mol % Sr-deficient composition as prepared at 800 degrees C, which could be the compromising effects of Sr content on both grain growth and second phase formation of BiTaO4. The substitution of Pb for Bi is accompanied by the occurrence of oxygen vacancies to compensate the charge balance, which is responsible for grain growth mechanism in Sr0.8Pb0.2Bi2.3Ta2O9 films. Fatigue endurance of Sr0.8Bi2.3Ta2O9 films becomes problematic after 10(9) cycles with a decrease in remanent polarization to 85% of the original value. This phenomenon was related to electron injection and creation of electron traps due to the occupation of Sr vacancies by Bi cations. It is demonstrated that the fatigue endurance of Sr0.8Bi2.3Ta2O9 film can be improved by doping with 20 mol % PbO. (C) 2000 American Institute of Physics. [S0021- 8979(00)01311-6].
URI: http://hdl.handle.net/11536/30498
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 87
Issue: 11
起始頁: 8024
結束頁: 8030
顯示於類別:期刊論文


文件中的檔案:

  1. 000087067400064.pdf