標題: MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
作者: Lin, Kung-Liang
Chang, Edward-Yi
Huang, Jui-Chien
Huang, Wei-Ching
Hsiao, Yu-Lin
Chiang, Chen-Hao
Li, Tingkai
Tweet, Doug
Maa, Jer-Shen
Hsu, Sheng-Teng
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2008
摘要: High quality GaN films were successfully grown on Si (111) substrates using the MOVPE method and a multilayer AlN buffer. The buffer layer film quality and thickness are critical for the growth of the crack-free GaN film on Si (111) substrates. Cracks started to form on the single layer high temperature (HT) AlN film, grown on Si (111) substrate as the AlN thickness was greater than 20 nm. However, a 100 nm crack-free AlN film, can be obtained when multilayer buffer of HT-AlN/low temperature (LT)-AlN/HT-AlN was grown on the Si(111) substrate. By using multilayer AlN buffer, a 2 mu m crack-free GaN film was successful grown on the 2 '' Si (111) substrate. Moreover, the GaN film (2 mu m thick) grown on Si with a GaN (004) Mosaic FWHM of only 0.12 degrees.
URI: http://hdl.handle.net/11536/30497
http://dx.doi.org/10.1002/pssc.200778454
ISSN: 1862-6351
DOI: 10.1002/pssc.200778454
期刊: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6
Volume: 5
Issue: 6
起始頁: 1536
結束頁: 1538
Appears in Collections:Conferences Paper


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