標題: Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
作者: Tyan, SL
Shields, PA
Nicholas, RJ
Tsai, FY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: magneto-photoluminescence;InGaAs/GaAs;(111)B;quantum dot;quantum well;diamagnetic shift;extent of carrier wave function
公開日期: 1-六月-2000
摘要: InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on GaAs (111)B substrates under different growing temperatures are investigated by magneto-photoluminescence (PL) up to 15 T in both Faraday and Voigt configurations. The spatial extents of the carrier wave functions (ECWFs) are deduced from the diamagnetic shift of the PL peak energy. The binding energies of the InGaAs/GaAs QWs are evaluated to be about 5 meV. The QW ECWFs in the growth direction obtained by the diamagnetic shift are consistent with those calculated by the k . p theory. The heights and radii of the InGaAs/GaAs QDs are also estimated from the ECWFs. In addition, we found that the in-plane ECWFs decreased slightly as the growth temperature was varied from 525 to 450 degrees C. The ECWFs in the growth direction decreased when the growth temperature was varied from 525 to 480 degrees C and then increased as the temperature was decreased to 450 degrees C.
URI: http://dx.doi.org/10.1143/JJAP.39.3286
http://hdl.handle.net/11536/30481
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.3286
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 6A
起始頁: 3286
結束頁: 3289
顯示於類別:期刊論文


文件中的檔案:

  1. 000088392800004.pdf