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dc.contributor.authorChen, JFen_US
dc.contributor.authorWang, PYen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorWong, HZen_US
dc.date.accessioned2014-12-08T15:45:13Z-
dc.date.available2014-12-08T15:45:13Z-
dc.date.issued2000-06-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/30468-
dc.description.abstractThe electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 degrees C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 degrees C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics. (C) 2000 American Institute of Physics. [S0021-8979(00)00711-8].en_US
dc.language.isoen_USen_US
dc.titleEffect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodesen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume87en_US
dc.citation.issue11en_US
dc.citation.spage8074en_US
dc.citation.epage8079en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000087067400073-
dc.citation.woscount0-
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