標題: Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
作者: Chen, JF
Wang, PY
Wang, JS
Wong, HZ
電子物理學系
Department of Electrophysics
公開日期: 1-六月-2000
摘要: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 degrees C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 degrees C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics. (C) 2000 American Institute of Physics. [S0021-8979(00)00711-8].
URI: http://hdl.handle.net/11536/30468
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 87
Issue: 11
起始頁: 8074
結束頁: 8079
顯示於類別:期刊論文


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  1. 000087067400073.pdf