標題: Phosphorus vacancy as a deep level in AlInP layers
作者: Sung, WJ
Wu, YR
Lee, SC
Wen, TC
Li, TJ
Chang, JT
Lee, WI
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: AlInP;phosphorus vacancy;defect;deep level;DLTS;depth profile measurement
公開日期: 15-六月-2000
摘要: Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.
URI: http://dx.doi.org/10.1143/JJAP.39.L567
http://hdl.handle.net/11536/30462
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L567
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 6B
起始頁: L567
結束頁: L568
顯示於類別:期刊論文


文件中的檔案:

  1. 000088393100005.pdf