標題: HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE
作者: JEN, TS
CHEN, JY
SHIN, NF
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: LIGHT-EMITTING DIODES;THIN-FILM DEVICES
公開日期: 15-四月-1993
摘要: To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED.
URI: http://hdl.handle.net/11536/3046
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 29
Issue: 8
起始頁: 707
結束頁: 708
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LB77100042.pdf