標題: Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymer
作者: Chang, KM
Yang, JY
Chang, YH
Tsai, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: spin-on polymer;inter-level dielectric;ashing resistance;reactive glass stabilization
公開日期: 1-七月-2000
摘要: The oxygen plasma via resist strip process causes significant damage to organic spin on polymer (Allied Signal X-720); thus its inter-level dielectric application is limited. A simple treatment technology, reactive glass stabilization (RGS), using reactive ion is proposed to reform the X-720 film surface. The reactive ion modification of the X-720 film can improve the resistance against oxygen plasma. The measurements of stress, thickness variation, scanning electron microscope (SEM) micrographs of gap filling and dielectric constant show that RGS can be practically used in the low dielectric material application with non-etch-back process. The measurements of fourier transform infrared (FTIR) spectroscopy, and auger electron spectroscopy (AES) show that RGS can effectively reform the surface of the X-720 film and increase the ashing resistance even in high carbon content spin on polymer.
URI: http://dx.doi.org/10.1143/JJAP.39.3930
http://hdl.handle.net/11536/30446
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.3930
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 7A
起始頁: 3930
結束頁: 3934
顯示於類別:期刊論文


文件中的檔案:

  1. 000088909900017.pdf