標題: The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
作者: Wu, YH
Huang, CH
Chen, WJ
Lin, CN
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-2000
摘要: We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 degrees C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0 x 10(10) cm(-2) and 3 x 10(10) eV(-1) cm(-2), respectively, from capacitance-voltage measurements. (C) 2000 The Electrochemical Society. S0013-4651(99)11-083-8. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1393601
http://hdl.handle.net/11536/30439
ISSN: 0013-4651
DOI: 10.1149/1.1393601
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 7
起始頁: 2754
結束頁: 2756
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