標題: High temperature formed SiGeP-MOSFET's with good device characteristics
作者: Wu, YH
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hole mobility;P-MOSFET;reliability;SiGe
公開日期: 1-七月-2000
摘要: We have used a simple process to fabricate Si0.3Ge0.7/Si p-MOSFET's. The Si0.3Ge0.7 is formed using deposited Ge followed by 950 degrees C rapid thermal annealing and solid phase epitaxy that is process compatible with existing VLSI. Hole mobility of 250 cm(2)/Vs is obtained from Si0.3Ge0.7 p-MOSFET that is similar to two times higher than Si control devices and results in a consequent substantially higher current drive. The 228 Angstrom Si0.3Ge0.7 thermal oxide grown at 1000 degrees C has a high breakdown field of 15 MV/cm, low interface trap density (D-it) of 1.5 x 10(11) eV(-1) cm(-2), and low oxide charge of 7.2 x 10(10) cm(-2). The source-drain junction leakage after implantation and 950 degrees C RTA is also comparable with Si counterpart.
URI: http://dx.doi.org/10.1109/55.847377
http://hdl.handle.net/11536/30424
ISSN: 0741-3106
DOI: 10.1109/55.847377
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 7
起始頁: 350
結束頁: 352
顯示於類別:期刊論文